STAFF LISTING

FRANK J. RUEß
BSc University of Heidelberg, Germany (1996)
MSc University of Heidelberg, Germany (2000)
PhD University New South Wales, Australia (2006)

Senior Research Fellow, Centre for Quantum Computer Technology

Research Interests

My past and present research has been revolving around the investigation of quantum effects. I have studied single crystal, high temperature superconductors in high magnetic fields at low temperatures. In the field of elementary particle physics, I have been involved in the first experimental observation of quantization of neutron energy eigen states due to the presence of the earth's gravitational field.

My present area of research is aimed at the study of quantum transport phenomena in semiconductor nanostructures created by scanning tunneling microscopy (STM). This involves the fabrication of buried Si:P devices in ultra high vacuum using a combination of STM-based hydrogen lithography, scanning electron microscopy and molecular beam epitaxy. By using a novel registration technique, it is now possible to align macroscopic contacts to buried STM-fabricated devices ex-situ using conventional optical lithography. The characterisation of their electrical properties at low temperatures and high magnetic fields provides vital information for the fabrication of devices with feature sizes approaching the quantum limit.

The suitability of this approach for the fabrication of atomic scale devices make this method a suitable candidate for the fabrication of a solid state quantum computer that exploits the nuclear spin of single atoms to act as quantum bits (qubits).



Publications

1. F.J. Rueß, A. P. Micolich, W. Pok, K.E.J. Goh, A.R. Hamilton, M.Y. Simmons “Ohmic conduction of sub-10nm P-doped silicon nanowires at cryogenic temperatures” Applied Physical Letters 92, 052101 (2008). Paper
   Featured in: Virtual Journal of Nanoscale Science & Technology, Vol. 17, Issue 7, (2008).
   
   
2. G. Scappucci, F. Ratto, D.L. Thompson, T.C.G. Reusch, W. Pok, F.J. Rueß , F. Rosei, and M.Y. Simmons, “Structural and electrical characterization of room temperature UHV-compatible SiO2”
   Applied Physical Letters 91, 222109, (2007). Paper
   Featured in: Virtual Journal of Nanoscale Science & Technology Vol. 16, Issue 24 (2007).
   
   
   
3. F.J. Rueß, W. Pok, K.E.J. Goh, A.R. Hamilton and M.Y. Simmons “Electronic properties of atomically abrupt tunnel junctions in silicon”, Physical Review B 75, 121303(R), 2007. Paper
   Featured in: Virtual Journal of Quantum Information Vol. 7, Issue 4 (2007).
   
   
4. F.J. Rueß, W. Pok, T.C.G. Reusch, M.J. Butcher, K.E.J. Goh, G. Scappucci, A.R. Hamilton and M.Y. Simmons, “Realization of Atomically Controlled Dopant Devices in Silicon”, Small, 3, No. 4, 563-567 (2007). Paper
   
   
5. F.J. Rueß, K.E.J. Goh, M.J. Butcher, T.C.G. Reusch, L. Oberbeck, B. Weber, A.R. Hamilton and M.Y. Simmons, “Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy”, Nanotechnology 18, 044023, 2007. Paper
   
   
6. F.J. Rueß, B. Weber, O. Klockan, A. R. Hamilton and M.Y. Simmons, "1D conduction properties of highly phosphorus doped planar nanowires patterned by scanning probe microscopy", Physical Review B 76, 085403 ( 2007). Paper
   
   
7. F.J. Rueß, G. Scap pucci, M. Füchsle, W. Pok, A. Fuhrer, D. L. Thompson,  T. C. G. Reusch, and M. Y. Simmons, "Demonstration of gating action in atomically controlled Si:P nanodots defined by scanning probe microscopy", accepted for Physica E (2007).
   
   
8. F.J. Rueß, W. Pok, T.C.G. Reusch, G. Scappucci, M. Füchsle, M. Mitic, D.L. Thompson,  and M.Y. Simmons, "Structural integrity and transport characteristics of STM-defined, highly-doped Si:P nanodots" submitted to Journal of Scanning Probe Microscopy (2007).
   
   
9. W. Pok, T.C.G. Reusch, G. Scappucci, F.J. Rueß, A.R. Hamilton, and M.Y. Simmons, "Electrical Characterization of Ordered Si:P Dopant Arrays", IEEE Transactions on Nanotechnology 6 (2), 213-217, 2007. Paper
   
   
10. K.E.J. Goh, L. Oberbeck, M.J. Butcher, N.J. Curson, F.J. Rueß and M.Y. Simmons, “Comparison of GaP and PH3 as dopant sources for STM-based device fabrication”, Nanotechnology 18, 065301 (2007). Paper
    
    
11. T. Hallam, M.J. Butcher, K.E.J. Goh, F.J. Rueß and M.Y. Simmons, “Use of a SEM to pattern large areas of a hydrogen resist for electrical contacts” Journal of Applied Physics 102, 034308 (2007). Paper
    
    
12. M.Y. Simmons, F.J. Rueß, K.E.J. Goh, W. Pok, T. Hallam, M.J. Butcher, T.C.G. Reusch, G. Scappucci, A.R. Hamilton and L. Oberbeck, “Atomic Scale Silicon Device Fabrication”, accepted for the Int. J. Nanotechnology, June 2007.
    
    
13. M. Füchsle, F.J. Rueß, T.C.G. Reusch, M. Mitic, and M.Y. Simmons, "Surface gate and contact alignment for buried, atomically precise STM-patterned devices" accepted Journal of Vacuum Science and Technology B (2007).
    
    
14. F.J. Rueß, L. Oberbeck, K.E.J. Goh, M.J. Butcher, E. Gauja, A.R. Hamilton and M.Y. Simmons, "The use of etched registration markers to make four terminal electrical contacts to STM-patterned nanostructures", Nanotechnology 16, 2446 (2005). Paper
    
    
15. F.J. Rueß, L. Oberbeck, M.Y. Simmons, K.E.J. Goh, A.R. Hamilton, T. Hallam, N.J. Curson and R.G. Clark, "Toward atomic-scale device fabrication in silicon using scanning probe microscopy", Nano Letters 4, 1969 (2004). Paper
    Featured in: Materials Research  Society (MRS) Research News November 2004 http://www.mrs.org/connections/matl_news_ext_2004b.html#nov04
    
    
16. T. Hallam, F.J. Rueß, N.J. Curson, K.E.J. Goh, L. Oberbeck, M.Y. Simmons and R.G. Clark, "Effective removal of hydrogen resists used to pattern devices using scanning tunnelling microscopy", Applied Physics Letters 86, 143116 (2005). Paper
    
    
17. M.Y. Simmons, F.J. Rueß, K.E.J. Goh, T. Hallam, S.R. Schofield, L. Oberbeck, N.J. Curson , A.R. Hamilton, M.J. Butcher, R.G. Clark and T.C.G. Reusch "Scanning probe microscopy for silicon device fabrication" Molecular Simulation 31, 505 (2005).
    
    
18. V.V. Nesvizhevsky, H.G. Börner, A.M. Gagarski, A.K. Petukhov, G.A. Petrov, H. Abele, S. Baessler, G. Dikovic, F.J. Rueß, T. Stöferle, A. Westphal, A.V. Strelkov, K.V. Protasov and A.Y. Voronin, “Measurement of quantum states of neutrons in the Earth's gravitational field“, Physical Review D, 67, 102002, (2003).
    
    
19. S.R. Schofield , N.J. Curson , M.Y. Simmons , F.J. Rueß, T. Hallam, L. Oberbeck and R.G. Clark , "Atomically precise placement of single dopants in Si", Physical Review Letters 91, 136104 (2003). Paper
    
    
20. R.G. Clark, R. Brenner, T.M. Buehler, V. Chan, N.J. Curson, A.S. Dzurak, E. Gauja, H-S. Goan, A.D. Greentree, T. Hallam, A.R. Hamilton, L.C.L. Hollenberg, D.N. Jamieson, J.C. McCallum, G.J. Milburn, J.L. O'Brien, L. Oberbeck, C.I. Pakes, S. Prawer, D.J. Reilly, F.J. Rueß, S.R. Schofield, M.Y. Simmons, F.E. Stanley, R.P. Starrett, C. Wellard and C. Yang, "Progress in silicon-based quantum computing" Philosophical Transactions of the Royal Society of London A 361, 1451(2003).
    
    
21. V.V. Nesvizhevsky, H.G. Borner, A.K. Petukhov, H. Abele, S. Baessler, F.J. Rueß, T. Stoferle, A. Westphal, A.M. Gagarski, G.A. Petrov, A.V. Strelkov, "Quantum states of neutrons in the earth's gravitational field", Nature 415, 297 (2002). Paper
    
    
22. M.C. de Andrade, N.R. Dilley, F.J. Rueß, M.B. Maple, "Competition between surface barriers and bulk pinning in a Nd2-xCexCuO4-y single crystal down to T/T-c=0.02", Physical Review B 57, R708 (1998). Paper
    
    
    

Peer-reviewed conference proceedings

1. F.J. Rueß, K.E.J. Goh, B. Weber, A.R. Hamilton, and M.Y. Simmons, "Electrical Properties of Atomically Controlled Si:P Nanowires Created by Scanning Probe Microscopy”, American Institute of Physics Conference Proceedings 893, 687, (2007).
   
   
2. M.Y. Simmons, F.J. Rueß, W. Pok, D.L. Thompson, M. Füchsle, G. Scappucci, T.C.G. Reusch, K.E.J. Goh, S. R. Schofield, B. Weber, L. Oberbeck, A.R. Hamilton and F. Ratto,  "Atomically precise silicon device fabrication", Proceedings of 7th IEEE Conference on Nanotech (2007).
   
   
3. F.J. Rueß, L. Oberbeck, M.Y. Simmons, K.E.J. Goh, A.R. Hamilton, T. Hallam, S.R. Schofield, N.J. Curson and R.G. Clark, "The fabrication of devices in silicon using scanning probe microscopy", Proc. SPIE Int. Soc. Opt. Eng. 5649, 306, (2005).
   
   
4. S. R. Schofield, N. J. Curson, M. Y. Simmons, F.J. Rueß, T. Hallam, L. Oberbeck, R. G. Clark, “Atomic control placement of individual P atoms in Si for the fabrication of a quantum computer qubit array” , Nanotech 2, 68 (2003). [www.nsti.org
   
   
5. V.V. Nesvizhevsky, H. Abele, S. Baessler, H. G. Börner, A. M. Gagarsky, G. A. Petrov, A. K. Petukhov, F.J. Rueß, A.V. Strelkov, A. Westphal, “Quantum States of Neutrons in the Gravitational Field”, Institut Laue Langevin Millenium Symposium, Grenoble, France, p. 36, (2001).
   
   
6. L. Oberbeck, N. J. Curson, T. Hallam, M. Y. Simmons, K. E. J. Goh, S. R. Schofield, F.J. Rueß, and R. G. Clark “Minimisation of P surface segregation during epitaxial silicon growth for the fabrication of a silicon-based quantum computer”,  COMMAD 2002 Proceedings 259-262, (2002).
   
   
7. V.V. Nesvizhevsky, H. G. Börner, A. M. Gagarsky, G. A. Petrov, A. K. Petukhov, H. Abele, S. Baessler, N. Haverkamp,F.J. Rueßand A. Westphal, “Observation of Quantum States of the Neutron in the Gravitational Field”, 8th International Conference on Interactions of Neutrons with Nuclei, Dubna, Russia, JINR, p. 200-204, 2000. (1998).
   

Patents

PCT/Au2004/001118 Fabricating nano- and atomic scale devices
Now at international phase: being examined in 8 countries.

Magazine Articles

Editors' Choice: Highlights of the recent literature - Applied Physics: Registering Nanostructures. Science Magazine Vol. 306, p1103 (2004).

Research News: Marking out Atomic-Scale Devices.
Materials Today Magazine p18 (2004).

Contact details

Copyright © Centre for Quantum Computer Technology.
All rights reserved.
Website Coordinator Alisha Toft