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Research Fellow, Centre
for Quantum Computer Technology.
Research
Interests
My current research interests
are directed towards atomic scale devices fabricated with phosphorous
dopants in Silicon. The placement of the dopants is achieved by
lithography with a Scanning Tunneling Microsopce (STM) on a hydrogen
resist and subsequent phosphine dosing. Recently, I have been investigating
the atomic scale electronic properties of phosphorous atoms in Si(001)
with Scanning Tunneling Microscopy and Spectroscopy (STS).
For my PhD thesis I have studied
the nanoscale electronic properties using STM/STS of a variety of
semiconductor heterostructures: Schottky barrier formation at metal
contacts on GaAs, pn junctions in GaAs, carbon dopants in GaAs in
homogeneous and delta-doped layers, structural and electronic properties
of AlGaAs-quantum wells and InAs-quantum dots, ordering in ternary
and quaternary compound III-V semiconductors.
Select
Publications
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T.C.G
Reusch, M. Wenderoth, L. Winking, N. Quaas and R.G. Ulbrich,
"Origin of Schottky barriers in gold contacts on GaAs(110)",
accepted for Physical Review Letters (2004). Paper
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J. Muller, M. Wenderoth,
N. Quaas, T.C.G Reusch and R.G.
Ulbrich, "Evolution of thin Cu films on GaAs(110)
towards atomically flat epitaxial overlayers", Applied
Physics Letters 85, 2220 (2004). Paper.
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M. Kemerink, T.C.G
Reusch, D.M. Bruls, P.M. Koenraad, H.W.M. Salemin and
J.H. Wolter, "Quantitative determination of the charge
density on surface steps on semiconductors by high-resolution
local scanning-tunneling spectroscopy", Physica E-Low-Dimensional
Systems & Nanostructures 13, 1159 (2002). Paper
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K.J. Engel, M. Wenderoth,
N. Quaas, T.C.G Reusch,
K. Sauthoff and R.G. Ulbrich, "Thermovoltage mapping of
standing electron waves on Au(111) surfaces at low temperatures",
Physical Review B 63, 165402 (2001). Paper
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T.C.G
Reusch, M. Wenderoth, A.J. Heinrich, K.J. Engel, N. Quaas,
K. Sauthoff, R.G. Ulbrich, E.R. Weber, K. Uchida and W. Wegscheider,
"Influence of short-range ordering on roughness of (AlGa)As
interfaces studied with cross-sectional scanning tunneling microscopy",
Applied Physics Letters 76, 3882 (2000). Paper
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K. Sauthoff, M. Wenderoth,
A.J. Heinrich, M.A. Rosentreter, K.J. Engel, T.C.G
Reusch and R.G. Ulbrich, "Nonlinear dynamic instability
in brittle fracture of GaAs", Physical Review B 60, 4789
(1999). Paper
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A.J. Heinrich, M. Wenderoth,
K.J. Engel, T.C.G Reusch,
K. Sauthoff, R.G. Ulbrich, E.R. Weber and K. Uchida, "Short-range
ordering in AlxGa1-xAs grown with metal-organic vapor-phase
epitaxy", Physical Review B 59, 10296 (1999). Paper
Contact
details
| Mailing
Address |
Centre
For Quantum Computer Technology
School of Physics
The University of New South Wales
Sydney NSW 2052
AUSTRALIA
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| Email |
thilo.reusch@unsw.edu.au |
| Telephone |
+61
2 9385 5092 |
| Facsimile |
+61
2 9385 6138 |

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