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Program
Manager Materials
Program
Centre for Quantum Computer Technology
Senior Lecturer The
University of Melbourne
ARC QEII Research Fellow
University of Melbourne
Research
Interests
Ion
implantation and doping effects in semiconductors and crystalline
oxides.
My
key research interests include
Doping
effects in the solid-state amorphous to crystalline phase transition
in group IV semiconductors. Defect structures and their annealing
characteristics in ion implanted silicon. Ion implantation doping
of crystalline oxides with optically active species for waveguide
applications.
Select
publications
-
J.C.
McCallum,"Kinetics
of intrinsic and dopant-enhanced solid phase epitaxy in buried
amorphous Si layers", in Materials Modification and Synthesis
by Ion Beam Processing, eds D.E. Alexander, N.W. Cheung, B.
Park and W. Skorupa, Materials Research Society Symposium Proceedings
438, 119 (1997).
-
X.F.
Zhu, J.S. Williams, D.J. Llewellyn and J.C.
McCallum,
"Microstructure of Ultra High Dose Self Implanted Silicon",
Materials Research Society Proceedings 504, 27 (1998).
-
J.C.
McCallum,"The
kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous
silicon layers", Nuclear Instruments and Methods in Physics
Research B148, 350 (1999).
-
J.C.
McCallum
and L.D. Morpeth, "Synthesis
of Ti:Sapphire by Ion Implantation", Nuclear Instruments
and Methods in Physics Research B148, 726 (1999).
-
J.O.
Orwa, J.C. McCallum,
S. Prawer, K.W. Nugent and D.N. Jamieson,
Diamond-like
carbon nanocrystals formed by implanting fused quartz and sapphire
(a-Al2O3) with carbon atoms,
Diamond and Related Materials 8, 1642-1647 (1999).
-
X.
Zhu, J.S. Williams and J.C.
McCallum,
"Structural changes in ultra-high-dose self-implanted crystalline
and amorphous silicon,
Nuclear Instruments and Methods in Physics Research B148, 268
(1999).
-
X.
Zhu, J.S. Williams and J.C.
McCallum,
" Surface
morphological structures in ultra-high-dose self-implanted silicon",
Applied Physics Letters 73, 1811 (1998).
-
X.
Zhu, J.S. Williams and J.C.
McCallum,
"Instability
of Nanocavities in Disordered and Amorphous Silicon Under Ion
Irradiation", Materials Research Society Proceedings 540,
127 (1999).
-
X.F.
Zhu, J.S. Williams, D.J. Llewellyn and J.C.
McCallum, "Instability
of nanocavities in amorphous silicon", Applied Physics
Letters 74, 2313 (1999).
-
L.D. Morpeth and J.C.
McCallum,
"Formation of Ti3+ in sapphire by co-implantation of Ti
and O ions", Applied Physics Letters 76, 424 (2000).
Contact
details
| Mailing
Address |
School
of Physics
University of Melbourne,
Vic 3010
AUSTRALIA
|
| Email |
j.mccallum@physics.unimelb.edu.au |
| Telephone |
+61
3 9344-4012 - Office |
| Facsimile |
+61
3 9347-4783 |
|
