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Staff Listing

STAFF LISTING

JEFFREY C. McCALLUM
B.Sc. University of Melbourne
Ph.D. University of Melbourne

 

JEFFREY C MCCALLUM

 

 

Program Manager Materials Program
Centre for Quantum Computer Technology

Senior Lecturer The University of Melbourne
ARC QEII Research Fellow University of Melbourne

 

Research Interests

Ion implantation and doping effects in semiconductors and crystalline oxides.

 

My key research interests include

Doping effects in the solid-state amorphous to crystalline phase transition in group IV semiconductors. Defect structures and their annealing characteristics in ion implanted silicon. Ion implantation doping of crystalline oxides with optically active species for waveguide applications.

 

Select publications

  1. J.C. McCallum,"Kinetics of intrinsic and dopant-enhanced solid phase epitaxy in buried amorphous Si layers", in Materials Modification and Synthesis by Ion Beam Processing, eds D.E. Alexander, N.W. Cheung, B. Park and W. Skorupa, Materials Research Society Symposium Proceedings 438, 119 (1997).

  2. X.F. Zhu, J.S. Williams, D.J. Llewellyn and J.C. McCallum, "Microstructure of Ultra High Dose Self Implanted Silicon", Materials Research Society Proceedings 504, 27 (1998).

  3. J.C. McCallum,"The kinetics of dopant-enhanced solid phase epitaxy in H-free amorphous silicon layers", Nuclear Instruments and Methods in Physics Research B148, 350 (1999).

  4. J.C. McCallum and L.D. Morpeth, "Synthesis of Ti:Sapphire by Ion Implantation", Nuclear Instruments and Methods in Physics Research B148, 726 (1999).

  5. J.O. Orwa, J.C. McCallum, S. Prawer, K.W. Nugent and D.N. Jamieson, Diamond-like carbon nanocrystals formed by implanting fused quartz and sapphire (a-Al2O3) with carbon atoms,
    Diamond and Related Materials 8, 1642-1647 (1999).

  6. X. Zhu, J.S. Williams and J.C. McCallum, "Structural changes in ultra-high-dose self-implanted crystalline and amorphous silicon,
    Nuclear Instruments and Methods in Physics Research B148, 268 (1999).

  7. X. Zhu, J.S. Williams and J.C. McCallum, " Surface morphological structures in ultra-high-dose self-implanted silicon", Applied Physics Letters 73, 1811 (1998).

  8. X. Zhu, J.S. Williams and J.C. McCallum, "Instability of Nanocavities in Disordered and Amorphous Silicon Under Ion Irradiation", Materials Research Society Proceedings 540, 127 (1999).

  9. X.F. Zhu, J.S. Williams, D.J. Llewellyn and J.C. McCallum, "Instability of nanocavities in amorphous silicon", Applied Physics Letters 74, 2313 (1999).

  10. L.D. Morpeth and J.C. McCallum, "Formation of Ti3+ in sapphire by co-implantation of Ti and O ions", Applied Physics Letters 76, 424 (2000).

 

Contact details

Mailing Address

School of Physics
University of Melbourne,
Vic 3010
AUSTRALIA

Email
Telephone +61 3 9344-4012 - Office
Facsimile +61 3 9347-4783

 

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